| PART |
Description |
Maker |
| STW9Q14B |
Lead Frame type LED PKG size:5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| STW9Q14C |
Lead Frame type LEd PKG size:5.6*3.0 thickness 0.75mm
|
Seoul Semiconductor
|
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| NESG3031M05-T1-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
|
California Eastern Labs
|
| B5B-900-8 |
B5B-900-8 is a GaAlAs LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-014 |
B5B-433-014 is a GaP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-B505 |
B5B-433-B505 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| MGF0952P |
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| ICX434DQN |
Diagonal 5.68mm(Type 1/3.2) Frame Readout CCD
Diagonal 5.68mm (Type 1/3.2) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras
|
SONY[Sony Corporation]
|
